Impact on Breakdown Voltage for AlGaN Channel E-HEMT Device used with the DC Boost Converter Circuit
Godwinraj, D., Godfrey, D., Sundararaman, P., and Nandagopal, V. (2025) Impact on Breakdown Voltage for AlGaN Channel E-HEMT Device used with the DC Boost Converter Circuit. International Journal of Electrical and Electronics Research, 13 (1). pp. 50-54.
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Abstract
In this paper, the impact on breakdown performance is demonstrated by the coupled operation of the E-mode AlGaN Channel HEMT for DC Boost Converter Circuit. CAD optimization of individual devices on the process and E-mode HEMT device level affects the circuit performance DC Boost Converter Circuit. The field plate length of Fp=2.7 μm results in the steady current at the voltage of VBV=790 V, whereas the field plate length of 3.6 μm results breakdown voltage of more than 1k volts. Circuit voltages at various nodes, Current in HEMT and SBD for switching cycle, and also the power dissipation is evaluated for two various doping concentrations 3E15(/cm3) and 9E15(/cm3). As a result, the dependency of power losses in the circuit on the physical parameters of the process stage is demonstrated. © 2025 by the Godwinraj D, Godfrey D, P. Sundararaman, V. Nandagopal.
| Item ID: | 89488 |
|---|---|
| Item Type: | Article (Research - C1) |
| ISSN: | 2347-470X |
| Copyright Information: | © 2025 by Godwinraj D, Godfrey D, P. Sundararaman, V. Nandagopal. This article published in open access publication under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/) |
| Date Deposited: | 11 Nov 2025 23:58 |
| FoR Codes: | 40 ENGINEERING > 4009 Electronics, sensors and digital hardware > 400908 Microelectronics @ 50% 40 ENGINEERING > 4018 Nanotechnology > 401807 Nanomaterials @ 20% 40 ENGINEERING > 4018 Nanotechnology > 401804 Nanoelectronics @ 30% |
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