An enhanced MOSFET threshold voltage model for the 6–300 K temperature range

Nguyen, Cong Dao, El Kass, Abdallah, Rahimi Azghadi, Mostafa, Jin, Craig T., Scott, Jonathan, and Leong, Philip H.W. (2017) An enhanced MOSFET threshold voltage model for the 6–300 K temperature range. Microelectronics Reliability, 69. pp. 36-39.

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An enhanced threshold voltage model for MOSFETs operating over a wide range of temperatures (6–300K) is presented. The model takes into account the carrier freeze-out effect and the external field-assisted ionization to address the temperature dependence of MOS transistors. For simplicity, an empirical function is incorporated to predict short channel effects over the temperature range. The results from the proposed model demonstrate good agreement with NMOS and PMOS transistors measured from fabricated chips.

Item ID: 47976
Item Type: Article (Research - C1)
ISSN: 1872-941X
Keywords: cryogenic electronics, threshold voltage, MOSFETs
Funders: University of Sydney, Australian Institute of Nanoscale Science, Technology Accelarator Scheme
Date Deposited: 31 Mar 2017 04:49
FoR Codes: 40 ENGINEERING > 4009 Electronics, sensors and digital hardware > 400908 Microelectronics @ 75%
40 ENGINEERING > 4018 Nanotechnology > 401804 Nanoelectronics @ 25%
SEO Codes: 97 EXPANDING KNOWLEDGE > 970109 Expanding Knowledge in Engineering @ 50%
97 EXPANDING KNOWLEDGE > 970110 Expanding Knowledge in Technology @ 50%
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