Microwave characterization of (La, Sr)(Ai,Ta)O3 using TE011 mode dielectric resonator
Jacob, M.V., Mazierska, J., and Krupka, J. (2004) Microwave characterization of (La, Sr)(Ai,Ta)O3 using TE011 mode dielectric resonator. Transactions of the Materials Research Society of Japan, 29 (4). pp. 1093-1096.
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Abstract
The permittivity and loss tangent of a dielectric material can be estimated from precise measurement data of the Q-factor and resonant frequency of a dielectric resonator containing the material under test. We have characterized an (La,Sr)(AI,Ta)O, (LSAT) single crystal of the cylindrical shape using TE011 mode dielectric resonator in two enclosures at a frequency of 15.5 GHz at temperatures from 15 K to 293 K and an LSAT planar sample at 9.7 GHz using a post cryogenic TEo1, resonator. Our measurements have shown that permittivity of LSAT is in the vicinity of23 and exhibits a peak at temperature of 190 K. We have also studied the temperature coefficient of frequency of the LSAT substrate. Due to the weaker temperature dependence of permittivity of LSAT substrates, HTS devices and circuits fabricated on LSAT can be more stable than on Lanthanum Aluminate.
Item ID: | 7203 |
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Item Type: | Article (Research - C1) |
ISSN: | 1382-3469 |
Keywords: | dielectric resonators; loss tangent; LSAT; permittivity |
Date Deposited: | 29 Mar 2010 02:04 |
FoR Codes: | 09 ENGINEERING > 0912 Materials Engineering > 091201 Ceramics @ 100% |
SEO Codes: | 89 INFORMATION AND COMMUNICATION SERVICES > 8901 Communication Networks and Services > 890199 Communication Networks and Services not elsewhere classified @ 50% 91 ECONOMIC FRAMEWORK > 9105 Measurement Standards and Calibration Services > 910599 Measurement Standards and Calibration Services not elsewhere classified @ 40% 86 MANUFACTURING > 8616 Computer Hardware and Electronic Equipment > 861603 Integrated Circuits and Devices @ 10% |
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