High quality shadow masks for top contact organic field effect transistors using deep reactive ion etching

Aljada, Muhsen, Mutkins, Karyn, Vamvounis, George, Burn, Paul, and Meredith, Paul (2010) High quality shadow masks for top contact organic field effect transistors using deep reactive ion etching. Journal of Micromechanics and Microengineering, 20 (7). pp. 1-6.

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Abstract

In this paper, we demonstrate the fabrication of top-contact silicon shadow masks for organic field effect transistors (OFETs) using plasma deep reactive ion etching (DRIE). Over 50 parallel and interdigitated finger contact masks of 30 μm thickness have been created on a single silicon wafer, with lengths spanning from 6.5 to 60 μm and channel widths varying from 1000 to 50 000 μm. Unlike all other mask fabrication techniques to date, these shadow masks are inexpensive, reusable, have nanoscopically sharp edges and can be made with precise (nanoscale) control over various sizes and shapes. Because a large number of these masks can be made at the same time, they can act as a platform for researchers studying new organic materials and OFET structures. Top contact OFETs have been successfully fabricated using these masks with performances comparable if not superior to those made with standard lithography.

Item ID: 32893
Item Type: Article (Refereed Research - C1)
ISSN: 1361-6439
Funders: Australian Research Council
Projects and Grants: ARC DP1095404
Date Deposited: 30 Apr 2014 09:56
FoR Codes: 03 CHEMICAL SCIENCES > 0305 Organic Chemistry > 030503 Organic Chemical Synthesis @ 25%
03 CHEMICAL SCIENCES > 0303 Macromolecular and Materials Chemistry > 030306 Synthesis of Materials @ 50%
03 CHEMICAL SCIENCES > 0303 Macromolecular and Materials Chemistry > 030399 Macromolecular and Materials Chemistry not elsewhere classified @ 25%
SEO Codes: 85 ENERGY > 8505 Renewable Energy > 850504 Solar-Photovoltaic Energy @ 25%
86 MANUFACTURING > 8616 Computer Hardware and Electronic Equipment > 861603 Integrated Circuits and Devices @ 75%
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