Noise and charge transport in polymer thin film structures

Marinov, O., Deen, M.J., Yu, J., Vamvounis, G., Holdcroft, S., and Woods, W. (2003) Noise and charge transport in polymer thin film structures. Proceedings of SPIE - The International Society for Optical Engineering, 5113. pp. 301-312.

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The low frequency noise (LFN) properties of. the field-effect transistors (FETs) using polymers as the semiconducting material in thin-film transistor (TFT) structures are investigated and discussed in terms of the charge carrier transport. Results obtained from several research groups are summarized. Injection-drift limited model (IDLM) for charge transport in amorphous PFETs is discussed. IDLM has some advantages in comparison to the commonly used metal-oxide-semiconductor (MOS) transistor models. A general trend of proportionality between noise power density and the DC power applied to the polymer FET's (PFET's), channel is observed in the data from several research groups. This trend implies mobility fluctuation in PFET as the dominant noise source.

Item ID: 32726
Item Type: Article (Research - C1)
ISSN: 1996-754X
Keywords: organic field-effect transistors, polymer TFT, low-frequency noise and fluctuation, charge transport, injection-drift-limited model, charge hopping, mobility noise
Date Deposited: 26 Feb 2016 00:52
FoR Codes: 03 CHEMICAL SCIENCES > 0305 Organic Chemistry > 030505 Physical Organic Chemistry @ 100%
SEO Codes: 85 ENERGY > 8505 Renewable Energy > 850504 Solar-Photovoltaic Energy @ 100%
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