Analyzing hysteresis behavior of capacitance-voltage characteristics of IZO/C₆₀/pentacene/Au diodes with a hole-transport electron-blocking polyterpenol layer by electric-field-induced optical second-harmonic generation measurement

Taguchi, Dai, Manaka, Takaaki, Iwamoto, Mitsumasa, Bazaka, Kateryna, and Jacob, Mohan V. (2013) Analyzing hysteresis behavior of capacitance-voltage characteristics of IZO/C₆₀/pentacene/Au diodes with a hole-transport electron-blocking polyterpenol layer by electric-field-induced optical second-harmonic generation measurement. Chemical Physics Letters, 572. pp. 150-153.

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DOI: 10.1016/j.cplett.2013.04.030

View at Publisher Website: http://dx.doi.org/10.1016/j.cplett.2013....

Abstract

By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed hysteresis behavior of capacitance-voltage (C-V) characteristics of IZO/polyterpenol (PT)/C₆₀/pentacene/Au diodes, where PT layer is actively working as a hole-transport electron-blocking layer. The EFISHG measurement verified the presence of interface accumulated charges in the diodes, and showed that a space charge electric field from accumulated excess electrons (holes) that remain at the PT/C₆₀ (C₆₀/pentacene) interface is responsible for the hysteresis loop observed in the C-V characteristics.


Item ID:	28716
Item Type:	Article (Research - C1)
ISSN:	1873-4448
Funders:	Japanese Society for the Promotion of Science (JSPS), Australian Research Council (ARC)
Projects and Grants:	22226007, DE130101550
Date Deposited:	07 Aug 2013 05:33
FoR Codes:	09 ENGINEERING > 0912 Materials Engineering > 091208 Organic Semiconductors @ 30% 09 ENGINEERING > 0912 Materials Engineering > 091209 Polymers and Plastics @ 70%
SEO Codes:	97 EXPANDING KNOWLEDGE > 970109 Expanding Knowledge in Engineering @ 100%
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